Product Summary

The MRF9045 is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRF9045 make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

Parametrics

MRF9045 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: - 0.5, +65 Vdc; (2)Gate-Source Voltage, VGS: - 0.5, +15 Vdc; (3)Total Device Dissipation, PD: 125W; (4)Storage Temperature Range, Tstg: - 65 to +150℃; (5)Case Operating Temperature, TC: 150℃; (6)Operating Junction Temperature, TJ: 200℃.

Features

MRF9045 features: (1)Integrated ESD Protection; (2)Designed for Maximum Gain and Insertion Phase Flatness; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Low Gold Plating Thickness on Leads. L Suffix Indicates 40μNominal; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Diagrams

MRF9045 test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF9045GNR1
MRF9045GNR1
Freescale Semiconductor
Transistors RF MOSFET Power 45W 945MHZ LDMOS TO270N
Data Sheet
Negotiable 
MRF9045LR1
MRF9045LR1
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-1: $46.80
1-10: $39.00
10-25: $35.10
25-50: $31.20
MRF9045LR5
MRF9045LR5
Freescale Semiconductor
Transistors RF MOSFET Power 45W 945MHZ LDMOS NI360L
Data Sheet
Negotiable 
MRF9045LSR5
MRF9045LSR5
Freescale Semiconductor
Transistors RF MOSFET Power 45W RF PWR LDMOS NI360S
Data Sheet
Negotiable 
MRF9045MR1
MRF9045MR1
Other

Data Sheet
Negotiable 
MRF9045NBR1
MRF9045NBR1

IC MOSFET RF N-CHAN TO272-2
Data Sheet
Negotiable 
MRF9045NR1
MRF9045NR1
Freescale Semiconductor
Transistors RF MOSFET Power 45W 1GHZ RF LDMOS TO270N
Data Sheet
0-345: $13.37
345-500: $12.72
MRF9045MBR1
MRF9045MBR1
Other

Data Sheet
Negotiable