IRFP260NPBF

IRFP260NPBF, HEXFET Power MOSFET, TO-247AC, 200V, 49A, International Rectifier

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PartNumber:: IRFP260NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2012-06-11

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Product Summary

The IRFP260NPBF is a Fifth Generation HEXFET from International Rectifier. The IRFP260NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFP260NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 device. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Parametrics

IRFP260NPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 50A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35A; (3)Pulsed Drain Current, IDM: 200A; (4)PD @TC = 25℃, Power Dissipation: 300W; (5)Linear Derating Factor: 2.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 560mJ; (8)Avalanche Current, IAR: 50 A; (9)Repetitive Avalanche Energy, EAR: 30 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 10V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP260NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.