(China (Mainland))
Product Summary
The IRG4PC40WPBF is an insulated gate bipolar transistor.
Parametrics
IRG4PC40WPBF absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 40 A; (3)IC @ TC = 100℃ Continuous Collector Current: 20 A; (4)ICM Pulse Collector Current: 160 A; (5)ILM Clamped Inductive Load Current: 160 A; (6)VGE Gate-to-Emitter Voltage: ±20 V; (7)EARV Reverse Voltage Avalanche Energy: 160 mJ; (8)PD @ TC = 25℃ Maximum Power Dissipation: 160 W; (9)PD @ TC = 100℃ Maximum Power Dissipation: 65 W; (10)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +150 ℃; (11)Soldering Temperature for 10 sec.: 300 ℃ (0.063 in. (1.6mm) from case); (12)Mounting Torque, 6-32 or M3 Screw: 10 lbf·in (1.1 N·m).
Features
IRG4PC40WPBF features: (1)Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications; (2)Industry-benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest-generation IGBT design and constructionoffers tighter parameters distribution, exceptional reliability; (6)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRG4PC40WPBF |
International Rectifier |
IGBT Transistors 600V Warp 60-150kHz |
Data Sheet |
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