Product Summary
The Third generation Power MOSFET IRF740PBF from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package of IRF740PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to IRF740PBF’s wide acceptance throughout the industry.
Parametrics
IRF740PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: 400V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at 10V, TC=25℃, ID: 10A; (4)Continuous Drain Current, VGS at 10V, TC = 100℃, ID: 6.3A; (5)Pulsed Drain Currenta, IDM: 40A; (6)Linear Derating Factor: 1.0 W/℃; (7)Single Pulse Avalanche Energy, EAS: 520mJ; (8)Repetitive Avalanche Current, IAR: 10A; (9)Repetitive Avalanche Energy, EAR: 13mJ; (10)Maximum Power Dissipation, TC = 25 ℃, PD: 125W; (11)Peak Diode Recovery, dV/dt: 4.0V/ns; (12)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (13)Mounting Torque, 6-32 or M3 screw: 10 lbf · in.
Features
IRF740PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF740PBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 10 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF710 |
Vishay/Siliconix |
MOSFET N-Chan 400V 2.0 Amp |
Data Sheet |
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IRF710, SiHF710 |
Other |
Data Sheet |
Negotiable |
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IRF710_R4943 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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