Product Summary
The BPY62 is a Silicon NPN Phototransistor. The applications of the device are Photointerrupters, Industrial electronics and For control and drive circuits.
Parametrics
BPY62 absolute maximum ratings: (1)Operating and storage temperature range, Top; Tstg: – 40 to + 125℃; (2)Collector-emitter voltage, VCE: 35 V; (3)Collector current, IC: 100 mA; (4)Collector surge current, ICS: 200 mA; (5)Emitter-base voltage, VEB: 7 V; (6)Total power dissipation, Ptot: 200 mW; (7)Thermal resistance, RthJA: 500 K/W.
Features
BPY62 features: (1)Especially suitable for applications from 400 nm to 1100 nm; (2)High linearity; (3)Hermetically sealed metal package (TO-18) with base connection, suitable up to 125℃; (4)Available in groups.
Diagrams
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![]() BPY62 |
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![]() BPY63P |
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![]() BPY64P |
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![]() BPY6708A1 |
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![]() Hand Tools PUNCH FOR BPY6704PC1 |
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![]() BPY6716B18 |
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![]() BPY6736-01 |
![]() FCI |
![]() Hand Tools |
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