Product Summary

The BPY62 is a Silicon NPN Phototransistor. The applications of the device are Photointerrupters, Industrial electronics and For control and drive circuits.

Parametrics

BPY62 absolute maximum ratings: (1)Operating and storage temperature range, Top; Tstg: – 40 to + 125℃; (2)Collector-emitter voltage, VCE: 35 V; (3)Collector current, IC: 100 mA; (4)Collector surge current, ICS: 200 mA; (5)Emitter-base voltage, VEB: 7 V; (6)Total power dissipation, Ptot: 200 mW; (7)Thermal resistance, RthJA: 500 K/W.

Features

BPY62 features: (1)Especially suitable for applications from 400 nm to 1100 nm; (2)High linearity; (3)Hermetically sealed metal package (TO-18) with base connection, suitable up to 125℃; (4)Available in groups.

Diagrams

BPY62 block diagram

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BPY62

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