LF356

operational amplifier, DIP, ±22V, 5,000 pF, LF356N, National Semiconductor

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~2.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.00~2.00

PartNumber:: LF356

Brand:: National Semiconductor - NS | Pack: SOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. handy chan's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-06-19

From Other Seller

Part Number:LF356
US $1.00 - 2.00
2DI240A-055

US $70.00 - 100.00 / Piece
(0) Remove
PIC16F917-I/P(PIC16F917-IP)

US $1.60 - 2.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The LF356N is a monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET. Technology). The amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356N is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Parametrics

LF356N absolute maximum ratings: (1)Supply Voltage: ±22V; (2)Differential Input Voltage: ±40V; (3)Input Voltage Range: ±20V; (4)Output Short Circuit Duration: Continuous; (5)TJMAX: 150℃; (6)Power Dissipation at TA = 25℃: 560 mW; (7)Thermal Resistance (Typical), θJA: 160℃/W ; (8)Storage Temperature Range: -65 to +150℃; (9)Soldering Information (Lead Temp.): 300℃; (10)ESD tolerance: 1000V.

Features

LF356N features: (1)Replace expensive hybrid and module FET op amps; (2)Rugged JFETs allow blow-out free handling compared with MOSFET input devices; (3)Excellent for low noise applications using either high or low source impedance—very low 1/f corner; (4)Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers; (5)New output stage allows use of large capacitive loads (5,000 pF) without stability problems; (6)Internal compensation and large differential input voltage capability.