Product Summary
The IRFP254PBF is a 125mohm power MOSFET. Fifth Generation HEXFET IRFP254PBF from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of the IRFP254PBF that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFP254PBF absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)EAS Single Pulse Avalanche Energy: 300 mJ; (3)IAR Avalanche Current: 14 A; (4)EAR Repetitive Avalanche Energy: 22 mJ; (5)dv/dt Peak Diode Recovery dv/dt: 7.4 V/ns; (6)Operating Junction and Storage Temperature Range: -55 to + 175℃.
Features
IRFP254PBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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![]() IRFP254PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 250V 23 Amp |
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![]() IRFP044 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP044, SiHFP044 |
![]() Other |
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![]() Negotiable |
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![]() IRFP044N |
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![]() MOSFET N-CH 55V 53A TO-247AC |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP044NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
![]() Data Sheet |
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![]() IRFP044PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP048 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 70 Amp |
![]() Data Sheet |
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