Product Summary

The IRFP254PBF is a 125mohm power MOSFET. Fifth Generation HEXFET IRFP254PBF from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of the IRFP254PBF that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFP254PBF absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)EAS Single Pulse Avalanche Energy: 300 mJ; (3)IAR Avalanche Current: 14 A; (4)EAR Repetitive Avalanche Energy: 22 mJ; (5)dv/dt Peak Diode Recovery dv/dt: 7.4 V/ns; (6)Operating Junction and Storage Temperature Range: -55 to + 175℃.

Features

IRFP254PBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.

Diagrams

IRFP254PBF Switching Time Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFP254PBF
IRFP254PBF

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Data Sheet

0-1: $1.89
1-10: $1.52
10-100: $1.38
100-250: $1.25
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(USD)
Quantity
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Data Sheet

0-1: $1.21
1-25: $0.79
25-100: $0.57
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