Product Summary
The IRFP250NPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for. The IRFP250NPBF provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFP250NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 30 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM Pulsed Drain Current: 120 A; (4)PD @TC = 25℃ Power Dissipation: 214 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 315mJ; (8)IAR Avalanche Current: 30A; (9)EAR Repetitive Avalanche Energy: 21mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.6 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55℃ to +175℃.
Features
IRFP250NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5) Fully Avalanche Rated; (6) Ease of Paralleling; (7) Simple Drive Requirements; (8) Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP250NPBF |
International Rectifier |
MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFP044 |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP044, SiHFP044 |
Other |
Data Sheet |
Negotiable |
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IRFP044N |
MOSFET N-CH 55V 53A TO-247AC |
Data Sheet |
Negotiable |
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IRFP044NPBF |
International Rectifier |
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
Data Sheet |
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IRFP044PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP048 |
Vishay/Siliconix |
MOSFET N-Chan 60V 70 Amp |
Data Sheet |
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