IRF3205PBF

IRF3205PBF, HEXFET Power MOSFET, TO-220AB, 55V, 110A, International Rectifier

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Price:: US $0.60~1.00 / piece [Get Latest Price]

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PartNumber:: IRF3205PBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2012-06-13

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Part Number:IRF3205PBF
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Product Summary

The IRF3205PBF is an Advanced HEXFET Power MOSFET from International Rectifier. The IRF3205PBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3205PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF3205PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 110 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 80 A; (3)Pulsed Drain Current, IDM: 390 A; (4)PD @TC = 25℃ Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Avalanche Current, IAR: 62 A; (8)Repetitive Avalanche Energy, EAR: 20 mJ; (9)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (11)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF3205PBF features: (1)Advanced Process Technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt ratings; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-free.