The G4PC30UD is an insulated gate bipolar transistor with ultrafast soft recovery diode.
G4PC30UD absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current: 23A; (3)IC @ TC = 100℃ Continuous Collector Current: 12A; (4)ICM Pulsed Collector Current: 92 A; (5)ILM Clamped Inductive Load Current: 92A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 12A; (7)IFM Diode Maximum Forward Current: 92A; (8)VGE Gate-to-Emitter Voltage: ± 20 V; (9)PD @ TC = 25℃ Maximum Power Dissipation: 100W; (10)PD @ TC = 100℃ Maximum Power Dissipation: 42W; (11)TJ Operating Junction and Storage Temperature Range: -55 to +150℃.
G4PC30UD features: (1)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package.
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