Product Summary

The CPV363M4F is an IGBT SIP MODULE. It is the key to International Rectifier’s advanced line of IMS (Insulated Metal Substrate) Power Modules. The CPV363M4F is more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. The CPV363M4F is highly suited to motor drive applications and where space is at a premium.

Parametrics

CPV363M4F absolute maximum ratings: (1)VCES Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃ Continuous Collector Current, each IGBT: 16 A; (3)IC @ TC = 100℃ Continuous Collector Current, each IGBT: 8.7 A; (4)ICM Pulsed Collector Current: 50 A; (5)ILM Clamped Inductive Load Current: 50 A; (6)IF @ TC = 100℃ Diode Continuous Forward Current: 6.1 A; (7)IFM Diode Maximum Forward Current: 50 A; (8)VGE Gate-to-Emitter Voltage: ±20 V; (9)VISOL Isolation Voltage, any terminal to case, 1 minute: 2500 VRMS; (10)PD @ TC = 25℃ Maximum Power Dissipation, each IGBT: 36 W; (11)PD @ TC = 100℃ Maximum Power Dissipation, each IGBT: 14 W; (12)TJ Operating Junction and TSTG Storage Temperature Range: -40℃ to +150℃; (13)Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case): 300℃.

Features

CPV363M4F features: (1)Fully isolated printed circuit board mount package; (2)Switching-loss rating includes all "tail" losses; (3)HEXFRED soft ultrafast diodes; (4)Optimized for medium operating (1 to 10 kHz).

Diagrams

CPV363M4F package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
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CPV363M4F
CPV363M4F


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Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
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